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| Ordering number:EN4652 FC151 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Current Mirror Circuit Applications Features * Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC151 is formed with two chips, being equivalent to the 2SA1669, placed in one package. * Excellent in thermal equilibrium and pair capability. Electrical Connection 1:Emitter 1 2:Base 1 3:Emitter 2 4:Collector 2 5:Base 2 6:Collector1 SANYO:CP6 Package Dimensions unit:mm 2103A [FC151] 1:Emitter 1 2:Base 1 3:Emitter 2 4:Collector 2 5:Base 2 6:Collector1 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings -20 -15 -3 -50 200 300 150 -55 to +150 Unit V V V mA mW mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio B-E Voltage Difference Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO VCB=-15V, IE=0 VEB=-2V, IE=0 20 0.7 0.93 3.0 1.5 5 2.0 3.0 1.0 1.5 15 mV GHz pF dB dB Conditons Ratings min typ max -0.1 -0.1 100 Unit A A hFE VCE=-10V, IC=-5mA hFE(small/ VCE=-10V, IC=-5mA large) VBE(large- VCE=-10V, IC=-5mA small) fT Cob | S21e | NF VCE=-10V, IC=-5mA VCB=-10V, f=1MHz VCE=-10V, IC=-5mA, f=0.9GHz VCE=-10V, IC=-3mA, f=0.9GHz Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large) and hFE(large-small) are for pair capability Marking:151 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5 FC151 No.4652-2/5 FC151 No.4652-3/5 FC151 No.4652-4/5 FC151 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4652-5/5 |
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